mos field effect transistor ge 5n20v n-channel mos field effect transistor ???? gemos(shen zhen) technology limited company ?V|?^@ 68 ?B 18 i-l add:room i-l,18f,shangbu bldg.,no.68 nanyuan road, futian district,shenzhen china. ?0755-83661391 0755-83661909 tel:0755-83661391 fax:0755-83661909 ]a518031 ?W? www.gemostech.com postcode:518031 website:www.gemostech.com ? gemos tech co., ltd. 2007 gemos description the GE5N20V uses advanced trench technology to provide excellent r ds(on) , rugged avalanche characteristics and less critical alignment steps theref ore a remarkable manufacturing reproducibility. this device is suitable for use as a battery protection or in other switching application. general features v ds = 20v,i d = 5a r ds(on) < 36m ? @ v gs =2.7v r ds(on) < 27.5m ? @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package applications battery protection load switch power management package marking and ordering information device marking device package reel size tape width quantity 5n20v GE5N20V tssop-8 ?330mm 12mm 3000 units absolute maximum ratlngs(ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v i d 5 a drain current-continuous @ current-pulsed (note 1) i dm 20 a maximum power dissipation p d 1.5 w operating junction and stor age temperature range t j t stg -55 to 150 thermal characteristics thermal resistance,junction-to-am bient (note 2) r ja 83 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v,i d =250a 20 v zero gate voltage drain current i dss v ds =18v,v gs =0v 1 a gate-body leakage current i gss v gs =12v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs , , i d =250a 0.6 v v gs =4.5v, i d =2.5a 21 27.5 m ? drain-source on-state resistance r ds(on) v gs =2.7v, i d =2.5a 26 36 m ? forward transconductance g fs v ds =15v, i d =2.5a 9.5 s schematic diagram marking and pin assignment tssop-8 top view
gemos GE5N20V ? gemos tech co.,ltd. 2006.9.6 version:1.1 page 2 of 4 dynamic characteristics (note 4) input capacitance c lss 460 pf output capacitance c oss 200 pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz 50 pf switching characteristics (note 4) turn-on delay time t d(on) 7 ns turn-on rise time t r 33 ns turn-off delay time t d(off) 27 ns turn-off fall time t f v dd =10v,i d =2.5a v gs =4.5v, r gen =4.7 ? 10 ns total gate charge q g 8.5 11.5 nc gate-source charge q gs 1.8 nc gate-drain charge q gd v ds =10v,i d =4.5a, v gs =4.5v 2.4 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =5a 1.2 v diode forward current i s 5 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. when mounted on minimum recommended footprint. 3. pulse test: pulse width 300s, duty cycle 1.5%. 4. guaranteed by design, not subject to production testing. typical electrical and th ermal characteristics figure 1: switching test circuit figure 2: switching waveforms figure 3: normalized maximum transient thermal impedance
gemos GE5N20V ? gemos tech co.,ltd. 2006.9.6 version:1.1 page 3 of 4 tssop-8 package information dimensions in millimeters (unit: mm) notes 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
gemos GE5N20V ? gemos tech co.,ltd. 2006.9.6 version:1.1 page 4 of 4 attention: any and all gemos products described or contained herein do not have specifications that can handle a pplications that require extremely high levels of reliability, such as life-suppo rt systems, aircraft's control sy stems, or other applications w hose failure can be reasonably expected to result in serious ph ysical and/or material damage. consult with your gemos representative nearest you before using any gemos products described or contained herein in such applications. gemos assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operatin g condition ranges, or other parameters) listed in products specifications of any and all gemos pr oducts described or contained herein. specifications of any and all ge mos products described or contained herein sti pulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mount ed in the customer?s products or equipmen t. to verify symptoms and states that cannot be evaluated in an independent de vice, the customer should always ev aluate and test devices mounted in the customer?s products or equipment. gemos thch. co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire , or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circui ts for safe design, redundant design, and structural design. in the event that any or all gemos product s(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concer ned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any informat ion storage or retrieval system, or other wise, without the prior written permission of gemos tech. co., ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. gemos believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual proper ty rights or other rights of third parties. any and all information described or co ntained herein are subjec t to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "deliver y specification" for the gemo s product that you intend to use. this catalog provides information as of may, 2007. specifications and information herein are subject to change without notice. the translation makes effort to be accurate and simply, if chines e-translation has difference, take english explanation as the standard. ? : gemos ?????????????? ?????????????? gemos ?????? gemos ???????????????????? gemos ??????p????????? ??????? gemos ?????????? ? gemos ???????????????????????1 ????2???2??????e????1?? ??????????? gemos ???????????????? ? gemos ????????????????? ?????? gemos ?????? ??????????? ?? / ??? gemos ???????????? ???? 2007 5 ??????? ???????
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